HIGH-POWER MICROWAVE TRANSISTOR Russian patent published in 2004 - IPC

FIELD: semiconductor electronics. SUBSTANCE: proposed transistor is characterized in that mean area of insulated metallization fragments of contact pads of emitter and base zones in each transistor module reduces with increase in inductance of its output circuit. In this case additional condition is no increase in total surface area of insulated metallization fragments of this module relative to modules having lower inductances of output circuits. Provision is made to compensate for differences in inductances of output circuits due to respective difference in capacitances of these output circuits. EFFECT: reduced nonuniformity of resonant frequencies of output circuits in separate transistor cells; enhanced transistor power gain. 1 cl, 3 dwg