POWERFUL UHF TRANSISTOR Russian patent published in 2005 - IPC

FIELD: semiconductor electronics.

SUBSTANCE: device has base with electrodes and semiconductor substrate with transistor cells, each of which has collector zone, emitter zone and base zone, each contacting to its metal-covered area on the surface of substrate, one of which is connected to common output electrode and ballast resistor, in contact with its opposite sides to emitter area and metallic emitter area, at least one of areas or one of ballast resistors of at least one cell has grooves in form of recesses with depth no less than thickness of their metallic cover. Total area of grooves in ballast resistor and contact areas of metallic cover of emitter and base areas of at least one transistor module, meant for decreasing parasitic capacity of areas, is increased with increased of inductiveness of its output circuit, relation of total areas of resistors and contact areas of current transistor module and any other one is no greater than half square relation of appropriate inductiveness values of output circuits.

EFFECT: decreased heterogeneousness of values of resonance frequency of separate transistor cells due to compensation of differences of inductive levels of output circuits appropriate for differences of capacitances of output circuits, and also transistor amplification coefficient is increased.

3 dwg