HEAVY-POWER MICROWAVE TRANSISTOR Russian patent published in 2003 - IPC

FIELD: semiconductor electronics. SUBSTANCE: transistor has N transistor structures each incorporating collector, base, and emitter zones with minimal distances between centers of emitter zone fragments, as well as ballast resistor contacting metallized emitter zone on one end and metallized pads for connecting emitter conductor, on opposite end. Ballast resistors have depressions whose width at points where resistor contacts metallized emitter zone does not exceed emitter zone multiplication pitch. Desired values of resistors can be obtained by varying number and geometry of depressions which makes it possible to reduce heterogeneity of transistor structures and their size due to reducing their size and difference in lengths and areas of resistors. EFFECT: reduced collector-to-emitter transfer capacitance and available collector capacitance of transistor. 1 cl, 2 dwg