HIGH-POWER BROADBAND HIGH-FREQUENCY AND MICROWAVE TRANSISTOR Russian patent published in 2002 - IPC

FIELD: semiconductor electronics. SUBSTANCE: capacitor plate connected to output electrode of transistor is divided into isolated sections. Area of each section is chosen to ensure uniform distribution of power gain maximums of matching LC sections of separate transistor cells or groups of cells connected with this section of capacitor plate within operating frequency band and also to equalize these maximums. All this provides for reduction of power loss in input matching circuit of transistor. EFFECT: enhanced power gain and efficiency of transistor. 2 dwg