HIGH-POWER BIPOLAR HIGH-FREQUENCY AND MICROWAVE TRANSISTOR Russian patent published in 2004 - IPC

FIELD: semiconductor electronics. SUBSTANCE: higher-rating ballast resistors of bipolar high-frequency and microwave transistor are distinguished by higher temperature coefficients of resistance causing greater relative variations in the value of higher-rating resistors in response to temperature fluctuations of transistor structures compared with values of other resistors. The result is that heat balance setting process in transistor is of variable character with relatively low rise of temperature fluctuation in transistor structures having worse conditions of heat transfer by maxima of its temperatures under steady state conditions. In this way excessive temperature rise of transistor structures of bipolar high-frequency and microwave transistor is prevented from the moment of its driving in conduction to heat balance setting due to more rapid increase in the value of ballast resistors connected to transistor structures where heat transfer conditions are worse compared with those connected to transistor structures where heat transfer conditions are better. EFFECT: enhanced reliability of transistor in transients. 1 cl, 1 dwg