HIGH-POWER HF AND SHF BIPOLAR TRANSISTOR STRUCTURE Russian patent published in 2004 - IPC

FIELD: semiconductor electronics.

SUBSTANCE: ballast resistor of HF and SHF bipolar transistor structure with certain law of distribution of resistance over width includes fragments with temperature coefficient of resistance different from temperature coefficient of resistance of resistor. Fragments are so distributed that relative change of resistance with change of temperature of sections of resistors with enhanced resistance is greater as compared with resistance of other sections. Owing to this fact process of establishment of heat balance in transistor structure shows oscillatory character with relatively small excess by maxima of variations of temperature of zone subject to formation of "hot" spot, value of its temperature under steady-state condition. Technical result of invention lies in prevention of overheating of active zones of high-power HF and SHF bipolar transistor structure from moment of its switching-on to establishment of heat balance thanks to faster rise of resistance of sections of ballast resistor connected to active zones with worse conditions of heat removal with reference to sections of resistor connected to active zones with better conditions of heat removal.

EFFECT: increased reliability of this transistor structure under dynamic mode.

2 dwg