POWERFUL HF- AND MICROWAVE TRANSISTOR STRUCTURE Russian patent published in 2021 - IPC H01L29/70 

FIELD: semiconductor electronics.

SUBSTANCE: high-power HF and microwave transistor structure includes areas of collector, emitter and base, contact metallization and ballast resistor connected by one edge to contact metallisation of emitter, and other edge with contact pad for emitter output connection. Ballast resistor contains fragments with temperature coefficient of resistance (TRC) α_*≠α₀, arranged so that, in the presence of a temperature gradient, high current flows through active regions of the transistor structure with better heat removal conditions, and temperature coefficients of resistance of materials and their melting point satisfy a certain condition.

EFFECT: technical result is high failure resistance of transistor structure by increasing its maximum operating temperature and resistance to increase in temperature of active areas of structure due to deviation of parameters of amplification mode (supply voltage, input power level, standing wave ratio in load, et cetera) from optimum values due to application of limitation on melting temperatures of materials of ballast resistor and its fragments depending on their TRC ratio; at temperature increase invention provides redistribution of heat power released by active areas towards its increase for sections with better heat removal conditions.

1 cl, 2 dwg