FIELD: electronic instruments. SUBSTANCE: device has dielectric base, metal terminals which are located on dielectric base, semiconductor crystal which has transistor areas and which bottom is soldered to collector plate one of which edges is connected to metal terminal. Ballast resistor which width is decreased from center of transistor crystal to peripheral areas, is located between each transistor area and corresponding emitter metal-coated area. Each transistor area is trapezoid. Smaller base of trapezium is directed towards collector plate edge which is connected to metal terminal. Base length and height of trapezium conform to equation given in invention specification. EFFECT: increased output power, increased efficiency due to uniform head distribution.
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