FIELD: semiconductor electronics.
SUBSTANCE: total width of active area of high-power semiconductor structure is changed due to excluding its fragments from area characterized in worst heat transfer conditions. Such reduction in active surface area is compensated for with excess by more great increase in surface area of its sections having relatively better heat transfer conditions without exceeding maximal working temperature of semiconductor structure.
EFFECT: enhanced output power to surface area ratio of semiconductor structure with nonuniform length of its active area in direction perpendicular to longitudinal axis of structure.
1 cl, 2 dwg
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