TECHNOLOGY OF PRODUCTION OF MULTILAYER EPITAXIAL STRUCTURES OF SILICON Russian patent published in 2004 - IPC

FIELD: semiconductor electronics.

SUBSTANCE: preliminary intake of mixture of carrier gas and doping component while growing superthin layers is carried out in one stage with concentration of doping component in gas mixture by factor of 15-30 times higher than specified one. Superthin layer is grown with thickness equal to 1-2 thicknesses of region of surface segregation of doping component. Concentration of doping component in gas mixture during preliminary intake of mixture of carrier gas is found by formula

where N is concentration of doping component in gas mixture; Q is specified number of charge carriers in superthin layer; is thickness of region of surface segregation; is excess of concentration of doping component above specified concentration of doping component in gas mixture; is distribution factor of doping component between gas mixture and epitaxial layer under equilibrium conditions of growth; is coefficient of excess of thickness of region of surface segregation.

EFFECT: improved parameters of multilayer epitaxial structures of silicon with superthin layers, enhanced working frequency and efficiency of SHF electronic articles produced on basis of data of epitaxial structures.

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