FIELD: measurement technology.
SUBSTANCE: noise intensity of semiconductor device is measured at normal conditions. Then semiconductor device is subject to influence of 5 to 10 pulses of electrostatic discharge of both polarities. Value of potential of electrostatic discharge is chosen to be equal to admissible value corresponding to technical conditions. Isothermal annealing is conducted at maximal admissible temperature of crystal during 4 to 6 hours. After it value of noise intensity is measured again. Most reliable devices are determined from difference on values of noise intensity.
EFFECT: improved truth of inspection.
1 dwg
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