FIELD: semiconductor equipment.
SUBSTANCE: method includes measuring intensiveness of noise at normal and increased temperature, then effecting equipment with special pulses of value, allowed by technical conditions, temperature burning is performed at temperature maximally allowed by technical conditions during 1-5 hours, and noise intensiveness is checked again at normal and increased temperature. Value A before effecting by pulses and after burning is determined from criterion ABRN≤ASTR. Potentially unstable semiconductor devices are then detected.
EFFECT: higher quality and reliability of batches of semiconductor devices.
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