METHOD FOR MANUFACTURING HYBRID MICROWAVE INTEGRATED CIRCUITS Russian patent published in 2023 - IPC H01L21/98 H05K3/30 H05K3/46 

FIELD: integrated circuits.

SUBSTANCE: invention relates to methods for manufacturing hybrid integrated circuits (HICs), such as a microwave generator module. The method of manufacturing a microwave HIC includes: manufacturing individual dielectric layers of a given sequence of a multilayer printed circuit board (MPB) with through holes, at least two of which are used as process base holes for placing pins in them for alignment and connecting the individual dielectric layers of the MPB, and one of the through holes in each of the dielectric layers is used to form a through hole designed to accommodate the formed component based on a coaxial dielectric resonator (CDR). A predetermined topological pattern of conductors of the metallization coating is made on the front side of each of the individual dielectric layers and screen grounding metallization on the reverse side of the lower and upper dielectric layers of the MPB. A through hole is formed in the MPB by arranging individual dielectric layers with their simultaneous alignment with pins along the process base through holes followed by their gluing with a prepreg into a monolith. The MPB is located and fixed by screen grounding metallization of the reverse side on the electrically and heat-conducting plate at the bottom of the metal case. Mounted components, including generator and control components, are located and fixed on the front side of the upper dielectric layer of the MPB, and their contacts are electrically connected to the conductors of the topological pattern of the metallization coating of the upper layer of the MPB. A CDR-based component is formed, having a screen grounding metallization on the side surface and a coaxial conductor with an exit on the end surface, whereas on its end surface facing the generator and control components, conductors are placed that coincide in location with the conductors of the topological pattern of the metallization coating upper layer of the MPB. The lower ends of the connecting conductors are connected to the lower ends of the conductors on the end surface of the CDR, the CDR is placed in the through hole of the MPB with fixing and electrical connection of its screen grounding metallization with the bottom of the metal case, the upper ends of the connecting conductors are bent to the front surface of the upper dielectric layer of the MPB and electrically connected to conductors of the topological pattern of the metallization coating of the upper layer, thereby forming the microwave part of the voltage-controlled generator circuit, by the combination of CDR, generator and control components and their electrical connection. The electrical characteristics of the HIC are controlled, the housing is sealed by attaching the cover.

EFFECT: improvement in the electrical and weight and size characteristics of a hybrid integrated circuit.

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