NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING ITS ELECTRODE Russian patent published in 2004 - IPC

FIELD: nitride semiconductor lasers.

SUBSTANCE: proposed device has substrate, n-type nitride semiconductor layer, active layer, and p-type nitride semiconductor layer. All these layers are formed in mentioned sequence on substrate. Interdigital part including uppermost layer of mentioned p-type nitride semiconductor layer is formed on the latter. Respective p-type ohmic electrode is formed on top of this interdigital part carrying p-type contact layer. Provision is made for first insulating film with hole on top of interdigital part that closes side of mentioned interdigital part and also area closest to this side that abuts against interdigital part. Mentioned p-type ohmic electrode contacts mentioned p-type contact layer through this hole. Second insulating film is formed on top of first one.

EFFECT: enhanced reliability.

19 cl, 3 dwg, 6 ex