FIELD: physics.
SUBSTANCE: nitride semiconductor device comprises n-doped semiconductor nitride layer, p-doped semiconductor nitride layer, active layer made between aforesaid layers by alternative application of layers with quantum wells and quantum barrier layers, electron blocking layer arranged between active layer and p-doped semiconductor nitride layer, and collector layer of holes arranged between active layer and said blocking layer and including region with higher-power valence zone compared with level of p-doped semiconductor nitride layer doping.
EFFECT: higher light intensity, reduced quantum efficiency.
10 cl, 6 dwg
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