NITRIDE SEMICONDUCTOR ELEMENT AND METHOD OF MAKING SAME Russian patent published in 2015 - IPC H01L33/40 

FIELD: physics, optics.

SUBSTANCE: invention relates to a light-emitting diode (LED) or a diode laser and a method of making same. The nitride semiconductor element 1 includes a main structural part 5 and a structural part 11 of an element formed on the main structural part 5 and having at least an n-type AlGaN semiconductor layer 6 and p-type AlGaN semiconductor layers 8, 9, 10 and additionally includes an n-electrode contact part 13a, formed on the n-type AlGaN semiconductor layer 6, an n-electrode part 13b of a contact pad formed on the n-electrode contact part 13a, and a p-electrode 12 formed on the p-type AlGaN semiconductor layers 8, 9, 10, wherein the molar ratio of AlN in the n-type AlGaN semiconductor layer 6 is 20% or higher, the n-electrode contact part 13a includes one or more metal layers, and the p-electrode 12 and the n-electrode part 13b of the contact pad have a common layered structure consisting of two or more layers with an Au layer as the uppermost layer and a layer which prevents Au diffusion, which consists of a conducting metal oxide and is formed under the uppermost to prevent Au diffusion.

EFFECT: present invention prevents formation of an Au alloy on the surface of an n-electrode and on the surface of a p-electrode in a nitride semiconductor element.

13 cl, 9 dwg