FIELD: measurement techniques.
SUBSTANCE: packaged power semiconductor is loaded with constant capacity. In time enough for establishment of the constant temperature difference between the device case and semiconductor crystal the values of heat-sensitive parameter and of the device case temperature in chosen point are measured and stored. In time enough for sufficient increasing of device case temperature the values of heat-sensitive parameter and of the device case temperature in chosen point are measured and stored once more. The coefficient of device heat-sensitive parameter is determined by formula: TK=(D2-D1)/(Tc2-Tc1), where TK - temperature coefficients , D1, D2 - measured values of the heat-sensitive parameter, Tc1, Tc2 [°C] - measured values of the device case temperature corresponding to the values of D1 and D2.
EFFECT: decreasing of measuring time and device cost.
1 dwg
