FIELD: production of dirt-free laser mirrors.
SUBSTANCE: proposed method for producing dirt-free surfaces of materials chosen from group incorporating GaAs, GaAlAs, InGaAs, InGaAsP, and InGaAs on mirror facets of chip for GaAS based laser resonators includes shearing of laser mirror facet in ambient atmosphere incorporating normal air, dry air, or dry nitric media. Oxides and other pollutants produced in the course of ambient atmosphere impact on mirror facets are removed by dry etching in vacuum. Then natural nitride layer is grown on mirror facets using nitrogen treatment. Such facet treatment ensures minimized light absorption and surface recombination.
EFFECT: facilitated procedure, enhanced economic efficiency and yield due to high reproducibility.
37 cl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PASSIVATION AND PROTECTION OF RESONATOR END FACES OF SEMICONDUCTOR LASERS | 2009 |
|
RU2421856C1 |
| SEMICONDUCTING LASERS MANUFACTURING METHOD | 2018 |
|
RU2676230C1 |
| METHOD FOR PASSIVATING GaAs LASERS BY ELECTRON-BEAM EVAPORATION WITH ION ASSISTANCE | 2022 |
|
RU2814419C1 |
| INJECTION LASER | 2006 |
|
RU2308795C1 |
| METHOD FOR MANUFACTURING INTER-INSTRUMENT INSULATION OF HIGH-POWER GALLIUM NITRIDE TRANSISTORS | 2021 |
|
RU2761051C1 |
| METHOD FOR PRODUCTION OF NITRIDE FILM ON GaSb SURFACE | 2008 |
|
RU2368033C1 |
| METHOD FOR PRODUCING NITRIDE FILM ON SURFACES OF SEMICONDUCTOR COMPOUNDS | 1999 |
|
RU2168237C2 |
| METHOD FOR MANUFACTURING A GALLIUM NITRIDE POWER FIELD-EFFECT TRANSISTOR | 2017 |
|
RU2668635C1 |
| SHF PHOTO DETECTOR MANUFACTURING METHOD | 2018 |
|
RU2676185C1 |
| METHOD OF MAKING NITRIDE FILM ON SURFACE OF GaSb BASED HETEROSTRUCTURE | 2008 |
|
RU2370854C1 |
