FIELD: lithium niobate films production.
SUBSTANCE: invention relates to a method for producing lithium niobate films with ferroelectric properties for use in optoelectronic devices, acoustoelectronics, micro-, nanoelectronics and spintronics. A method for producing a thin film of lithium niobate on a silicon substrate includes high-frequency magnetron sputtering of a lithium niobate target, which is a cathode, in a working gas atmosphere onto a silicon substrate. Sputtering of the target is carried out on a silicon substrate heated to 550°C at a specific power of a high-frequency discharge from 15 to 35 W⋅cm2, released by a magnetron, for 10-360 min. The silicon substrate is placed parallel to the specified target at a distance of 45-55 mm above the target erosion zone in the region in which the energy effect of the plasma on the silicon substrate is maximal. Ar or a mixture of Ar and O2 are used as a working gas.
EFFECT: simplification of fabrication of structures consisting of a substrate and a thin compact, textured crystalline coating of lithium niobate with an elemental composition corresponding to LiNbO3.
1 cl, 2 dwg, 1 ex
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Authors
Dates
2021-12-22—Published
2021-04-19—Filed