FIELD: electronics.
SUBSTANCE: method for growing silicon crystal having d diameter from melt includes forming at remaining pressure in well of 50-150 mmHg of gas flow above melt being in crucible in presence of gas-directing cylindrical screen with diameter 
, where D - diameter of crucible mounted coaxially to mono-crystal to be grown. Gas-directing cylindrical screen is additionally provided with gas-separating ring screen with inner diameter 
, which is placed above gas-directing cylindrical screen coaxially to it. Gas-directing cylindrical screen is mounted and supported at height 
from melt surface.
EFFECT: simplified method, lower production costs.
1 dwg, 1 ex
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