MEMBRANE TYPE SENSITIVE ELEMENT AND ITS MANUFACTURING METHOD Russian patent published in 2008 - IPC H01L29/84 

FIELD: instrument engineering.

SUBSTANCE: invention is designed for use in manufacturing technology and design of the wide range of microelectronic devices. The sensitive element consists of a monocrystal silicon base member, a two-layer membrane including the Si₃N₄ layer and the compensation AlN layer, with predominant orientation of the <0001> texture axis along the normal line to the membrane surface, positioned above the opening in the base member forming an under-membrane chamber (UMC), and the information signal reading unit. Correlation between the depths of the Si₃N₄ and the AlN layers is inversely proportional to the in-built mechanical stress. Sensitive elements are manufactured by pyrolytic coating of the base member silicon nitride layer surface with a silane-containing substance, mainly dichlorosilane, in the ammonia atmosphere with the use of the SiO₂ sublayer; then the compensation coating layer is added by high-frequency magnetron spraying and subsequent UMC formation on the back side of the base member in two stages: first, by the liquid anisotropic etching of the base member material at the UMC location, then, after adding the compensation layer, during the second stage of the UMC formation - by liquid anisotropic etching of the bottom of the newly formed blind hole in the base member - down to the silicon nitride layer.

EFFECT: widening the variety of materials used for the compensation layer, as well as the functional capabilities of the entire product item.

5 cl, 3 dwg, 4 tbl, 3 ex