METHOD FOR DETECTING POTENTIALLY UNSTABLE TRANSISTORS Russian patent published in 2005 - IPC

Abstract RU 2253125 C1

FIELD: micro-electronics industry.

SUBSTANCE: method includes, after prior results of test for each transistor type, performing stability tests in constant mode of current amplification coefficient measurement during 20-30 minutes, results of which are used to estimate transistor stability.

EFFECT: shortened test time with no effect from stress density current.

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RU 2 253 125 C1

Authors

Gorlov M.I.

Andreev A.V.

Anufriev L.P.

Dates

2005-05-27Published

2003-10-27Filed