METHOD OF COMPARATIVE EVALUATION OF BATCHES OF TRANSISTORS BY QUALITY AND RELIABILITY Russian patent published in 2020 - IPC G01R31/26 

FIELD: microelectronics.

SUBSTANCE: invention relates to microelectronics and specifically to methods of providing quality and reliability of semiconductor transistors, and can be used for comparative evaluation of quality and reliability of batches of transistors of the same type both at the stage of production, and at the input inspection at enterprises manufacturing radioelectronic equipment. Method of comparative evaluation of batches of transistors by quality and reliability consists in that identical sampling of batches of transistors is prepared, transistor current transfer coefficient is measured in circuit with common emitter at normal temperature of about 20 °C, then performing transistor testing for failure-free operation for approximately 100 hours at high temperature and measuring current transfer coefficient in circuit with common emitter at high temperature, then, after holding the transistors for at least 24 hours under normal conditions, the transistor current transfer coefficient is again measured in the common emitter circuit at normal temperature, based on the results of measurements, values of relative change of current transistor current transfer coefficient are calculated immediately after their tests for failure reliability K₁ and after holding at normal conditions K₂, then in each sample of transistors calculating product P₁ values K₁ of all transistors in sample and product P₂ values K₂ of all transistors in sample, based on measurements and calculations as a higher-quality and reliable batch of transistors, a batch of transistors with the lowest values of products P₁ and P₂ of the corresponding sample of transistors is evaluated.

EFFECT: invention provides for rejection of potentially unreliable transistors without destructive effects.

1 cl, 2 tbl