FIELD: electronic engineering.
SUBSTANCE: proposed method for detecting a priori defective transistors in the course of their manufacture and application intended to ensure desired quality and reliability of lots of transistors includes dc measurements of emitter-base and collector-base junction noise on representative sample. Transistor reliability is evaluated by difference in noise intensities of emitter-base and collector-base junctions.
EFFECT: enhanced reliability and facilitated procedure.
1 cl, 1 tbl, 1 ex
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