METHOD FOR MANUFACTURE OF POWERFUL SHF TRANSISTOR Russian patent published in 2014 - IPC H01L21/335 B82B3/00 

FIELD: electricity.

SUBSTANCE: method for manufacture of powerful SHF transistor includes application of a solder layer to the flange, shaping of pedestal, application of a sublayer fixing the transistor crystal to the pedestal, formation of p-type conductivity oriented at the plane (111) at the base substrate of single-crystalline silicon and auxiliary epitaxial layers, application of the basic layer and buffer layer for growing of epitaxial structure of a semiconductor device based on wide-gap III-nitrides, application of heat conductive layer of CVD polycrystalline diamond to the basic layer, removal of the basic substrate with auxiliary epitaxial layers up to the basic layer, growing of heteroepitaxial structure based on wide-gap III-nitrides on the basic layer and formation of the source, gate and drain. The heat conductive layer of CVD polycrystalline diamond is used as a pedestal; nickel is implanted to its surficial region and annealed. Before formation of the source, gate and drain an additional layer of insulating polycrystalline diamond and additional layers of hafnium dioxide and aluminium oxide are deposited on top of the transistor crystal; the total thickness of the above layers is 1.0-4.0 nm.

EFFECT: invention allows increased heat removal from the active part of SHF-transistor and minimisation of gate current losses.

6 cl, 4 dwg