METHOD FOR MANUFACTURING THIN SEMICONDUCTOR FILMS ON INSULATOR (ALTERNATIVES) Russian patent published in 2005 - IPC

FIELD: microelectronics.

SUBSTANCE: proposed method is meant for use in manufacturing thin-film semiconductor-on insulator structures for producing very large-scale integrated circuits, including silicon-on-insulator structures, and involves implantation of hydrogen or noble-gas ions in semiconductor wafer surface through insulator layer, connection of semiconductor wafer to carrying plate, heat treatment at temperature ensuring wafer splicing and irradiated wafer foliation; semiconductor wafers are irradiated in two or thee steps. First step includes irradiation through their foliation depth and during other step or steps they are irradiated through depth other than that of foliation at dose rate lower than that used for wafer foliation.

EFFECT: enhanced quality of semiconductor-on insulator structures due to adequate choice of blister-preventing implantation conditions.

6 cl, 5 dwg