FIELD: integrated microelectronics; semiconductor integrated circuits, such as programmable logic arrays, electrically programmable read-only memories.
SUBSTANCE: proposed method for manufacturing programmable members of integrated circuits includes formation of first layer of aluminum base material on semiconductor layer carrying integrated-circuit members, first barrier layer, amorphous silicon layer, second barrier layer, and additional aluminum base layer; formation of resist mask in the form of local areas at location points of bottom electrodes; local etching of additional aluminum base layer, second barrier layer, amorphous silicon layer, and first barrier layer until first aluminum base layer is exposed to form local islands of layers being etched; removal of resist; formation of resist mask covering location areas of bottom layer conductors and bottom electrodes; local etching of resist-free areas of first aluminum base conducting layer; removal of resist; formation of insulating layer; formation of resist mask with windows above island surface and bottom layer conductor surface; local etching of insulating layer in resist windows; removal of resist; formation of top layer conductors and top electrodes by way of application and local etching of first aluminum base conducting layer. Proposed method provides for enhanced reproducibility of parameters of programmable-member material layer and conjugate barrier layers as these layers are formed on planar surface and are free from defects typical of layers formed on embossed one.
EFFECT: improved reproducibility of electrophysical parameters, such as breakdown voltage, enhanced reliability and yield.
7 cl, 15 dwg
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Authors
Dates
2005-10-27—Published
2003-04-17—Filed