FIELD: physics.
SUBSTANCE: invention relates to methods for producing multilayer semiconductor structures in an AlGaAs system by the liquid-phase epitaxy (LPE) method. The LPE method is used for producing optoelectronic devices and power electronic devices. When the method is developed, an additional layer of AlxGa1-xAs composition of 0.85≤x≤0.95 is grown after the formation of the last functional layer of the heterostructure, followed by removal of the additional layer by chemical selective etching.
EFFECT: improved electrophysical parameters of epitaxial structures grown by liquid-phase epitaxy method, while the precision exception of additional operation to remove excess thickness of the functional layer.
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