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2 561 779

(13)

(51)

IPC

H01L29/861(2006-01-01)

(21) (22)

Application

2014124774/28, 2014-06-17

(24)

Start date

2014-06-17

(22)

Actual filing date

2014-06-17

(45)

Published

2015-09-10

(72)

Inventor

Junusov Igor' VladimirovichArykov Vadim StanislavovichJushchenko Anastasija MikhajlovnaPlotnikova Aleksandra Jur'Evna

(73)

Holder

Zakrytoe Aktsionernoe Obshchestvo Firma

SEMICONDUCTOR DIODE Russian patent published in 2015 - IPC H01L29/861

Abstract RU 2561779 C1

FIELD: electricity.

SUBSTANCE: in semiconductor diode on GaAs semiconductor substrate the cathodic layer, the depleted layer, the barrier layer, the depleted narrow-zone layer, the anode narrow-zone layer, the anode layer are located. The metallised cathode contact with ohmic resistance is formed to the cathodic layer. The metallised anode contact with ohmic resistance is formed to the anodic layer. On the boundary of the anode layer and anode narrow-zone layer and on the boundary of the barrier layer and the depleted narrow-zone layer the heterojunctions are formed.

EFFECT: decrease of return current and increase of breakdown voltage of the diode.

2 cl, 6 dwg, 2 tbl

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RU 2 561 779 C1

Authors

Junusov Igor' Vladimirovich

Arykov Vadim Stanislavovich

Jushchenko Anastasija Mikhajlovna

Plotnikova Aleksandra Jur'Evna

Dates

2015-09-10—Published

2014-06-17—Filed