HETEROEPITAXIAL SEMICONDUCTOR STRUCTURE FOR PHOTODETECTOR CELL Russian patent published in 1995 - IPC

FIELD: semiconductor devices. SUBSTANCE: two highly alloyed n⁺-type layers are additionally introduced in known heteroepitaxial semiconductor structure for photodetector cell that has n-type gallium arsenide substrate carrying n-type heteroepitaxial indium arsenide layer; first highly alloyed layer is located on layer-to-substrate interface and its thickness equals that of effective layer; second n⁺-type layer whose thickness is greater than length of tunnel transparency for minority carriers is spaced from first one at distance greater than double Debye screening distance. Heteroepitaxial layers of A₃B₅, A₄B₆, A₂B₆ compositions may be used for active layer and for substrate use may be made of semiconductor and insulating materials, heteroepitaxial structures with buffer dielectric and semiconductor layers. EFFECT: improved design. 2 cl, 2 dwg