LAYER OF TOPOLOGICAL INSULATOR PbSnTe:In ON CRYSTAL SUBSTRATE AND METHOD FOR ITS MANUFACTURE Russian patent published in 2022 - IPC H01L21/36 

FIELD: three-dimensional crystalline topological insulators.

SUBSTANCE: invention relates to the field of three-dimensional crystalline topological insulators. The topological insulator layer Pb_1-xSn_xTe:In on a crystalline substrate consists of the first Pb_1-xSn_xTe:In layer successively epitaxially grown on a crystalline substrate, where x=0.2-0.3, 0.5-1 µm thick, with an indium concentration of 0.2-2 % and the second layer Pb_1-xSn_xTe:In where x≥0.3 with a thickness of 10-20 nm with an indium concentration of 0.1-1.5%. The crystalline substrate contains successively epitaxially grown on Si(111) layers of CaF₂ 5–15 nm thick and BaF₂ 10–20 nm thick. A method for manufacturing a layer of a Pb_1-xSn_xTe:In topological insulator on a crystalline substrate includes successively growing a CaF₂ layer 5–15 nm thick on a previously chemically cleaned Si(111) substrate by molecular beam epitaxy at a temperature of 230–750°C from an effusion cell containing CaF₂ with a purity of at least 99.99%, at a residual pressure in the chamber of at least 5×10⁷ Pa at a rate of 0.1-0.3 Å/s, a BaF₂ layer 10-20 nm thick at a temperature of 230-750°C from an effusion cell containing BaF₂ with a purity of at least 99 .99%, a Pb_1-xSn_xTe:In layer, where x=0.2-0.3, 0.5-1 µm thick at a temperature of 230-320°C with an indium concentration of 0.2-2% and a Pb_1-xSn_xTe:In layer: In with a thickness of 10-20 nm at a temperature of 230-320°C with an indium concentration of 0.1-1.5% from two streams Pb_1-xSn_xTe:In and SnTe at a ratio of flows that provides the concentration of tin corresponding to the stoichiometric formula Pb_1-xSn_xTe:In with x≥0 ,3.

EFFECT: development of a topological insulator layer of Pb_1-xSn_xTe:In doped with indium on a crystalline substrate, and a method for manufacturing such a layer.

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