AND GATE Russian patent published in 2006 - IPC H03K19/20 H03K19/94 

Abstract RU 2281605 C2

FIELD: automation and computer engineering.

SUBSTANCE: proposed AND gate (Fig. 3) that affords ternary logic function has binary logic NAND gates 12 and NOR gates 13 series-connected between positive voltage supply bus 2 and negative voltage supply bus 3 and built to CMOS technology; their inputs are connected to input buses 4, 5 and outputs 15, 16, to first and second inputs of integrating component 14, respectively; output of the latter is connected to load 7. Point of connection of supply leads of both gates is connected to common bus 1.

EFFECT: enhanced capacity of device, provision for its unification with binary logic integrated circuits.

3 cl, 4 dwg, 8 tbl

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RU 2 281 605 C2

Authors

Popov Nikolaj Dmitrievich

Lukashenko Vladimir Anatol'Evich

Dates

2006-08-10Published

2004-11-01Filed