FIELD: wiring electronic components.
SUBSTANCE: proposed metal-plated diamond wafer has intermediate layer between diamond wafer and its metal plating in the form of intermediate-layer material and layer binding it to carbon to ensure metal-to-diamond adhesion; this intermediate layer is made in the form of silicon layer, 0.04 to 0.1 μm thick, and silicon-to-carbon binding layer with silicon concentration of 1019 to 1021 at/cm2 therein; it is produced by applying silicon layer on diamond wafer followed by its irradiation with accelerated ions of mass equal to or greater than that of silicon atoms at energy of 30-300 keV and dose rate of 100-1000 μC/cm2.
EFFECT: enhanced electrophysical parameters due to eliminating degradation of diamond wafer properties at high metal-to-diamond adhesion.
5 cl, 1 dwg, 1 tbl
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