METALLISED PLATE OF DIAMOND FOR PRODUCTS OF ELECTRONIC ENGINEERING Russian patent published in 2011 - IPC H01L23/34 

FIELD: electricity.

SUBSTANCE: metallised plate of diamond for products of electronic engineering comprises at least on one of surfaces an intermediate layer betweeh the diamond plate and a metallising layer, made in the form of material of an intermediate layer and a layer of its connection to carbon of the near-surface layer of the diamond plate and providing for adhesion of the metallising layer. At the same time the metallised diamond plate additionally comprises an electrically conducting layer of diamond, which is directly adjacent to the intermediate layer. The electrically conducting layer of diamond is made with the specified specific electric resistance equal to 0.3-2.5 Ohm/cm, thickness of at least 0.05 mcm, and higher - is limited by the specified thickness of the diamond plate.

EFFECT: reduced thermal resistance, expanded functional capabilities, with preservation of high adhesion of the metallising layer and high reliability of the metallised diamond plate.

5 cl, 2 dwg, 1 tbl