FIELD: physics.
SUBSTANCE: process of semiconductor device manufacturing in semiconductor structure provides improved quantum well intermixing in the desired parts of the device by forming of high-quality epitaxial layer on substrate, the layer featuring a quantum well; forming of second, low-quality flawed epitaxial layer over the high-quality layer; and thermal processing of the structure for obtaining of at least partial diffusion of flaws to the high-quality layer for intermixing of quantum wells in the structure. At that, flawed epitaxial layer is formed by change of original element ratio during growth beyond ideal or stoichiometrical conditions for obtaining crystal lattice flaws. Also a device manufactured by this process is offered.
EFFECT: quantum well intermixing at lower temperatures and improvement of the device characteristics.
22 cl, 12 dwg
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