FIELD: manufacture of semiconductor devices built around thin films of amorphous siliocn. SUBSTANCE: method involves deposition of film onto heated substrate by decomposing gas mixture containing monosilane hydrogen, and gaseous ammonia in high-frequency glow-discharge plasma; ammonia content in mixture is 1-4 volume percent. EFFECT: high thermal stability of electrophysical and atructural characteristics of films produced, high adhesive properties of films.
| Title | Year | Author | Number |
|---|---|---|---|
| INFRA-RED RADIATION SENSOR | 1995 |
|
RU2083030C1 |
| METHOD OF PRODUCING AMORPHOUS SILICON FILMS CONTAINING NANOCRYSTALLINE INCLUSIONS | 2012 |
|
RU2536775C2 |
| METHOD FOR FORMING AN ORDERED ARRAY OF SILICON NANOCRYSTALS OR NANOCLUSTERS IN A DIELECTRIC MATRIX | 2017 |
|
RU2692406C2 |
| METHOD FOR PRODUCING AMORPHOUS HYDROGENATED SILICON | 2000 |
|
RU2168795C1 |
| METHOD FOR INCREASING EFFICIENCY OF DOPING AND CHANGING CONDUCTIVITY TYPE OF AMORPHOUS HYDROGENATED SILICON SLIGHTLY DOPED WITH ACCEPTOR IMPURITIES | 2016 |
|
RU2660220C2 |
| METHOD FOR PRODUCING ACTIVE STRUCTURE OF NON-VOLATILE RESISTIVE MEMORY ELEMENT | 2020 |
|
RU2749028C1 |
| REACTOR FOR TREATMENT OF SUBSTRATES IN PLASMA OF MICROWAVE GLOWING DISCHARGE | 1993 |
|
RU2073933C1 |
| METHOD AND DEVICE FOR PRODUCING THIN SEMICONDUCTOR FILM | 1998 |
|
RU2189663C2 |
| METHOD FOR MICROWAVE PLASMA FORMATION OF CUBIC SILICON CARBIDE FILMS ON SILICON (3C-SiC) | 2013 |
|
RU2538358C1 |
| PROCESS OF MANUFACTURE OF SEMICONDUCTOR COMPONENTS OF SHF HIGH-POWER TRANSISTOR MICROASSEMBLIES | 1991 |
|
RU2017271C1 |
