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2 168 795

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C1

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IPC

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Application

2000100431/28, 2000-01-06

(24)

Start date

2000-01-06

(22)

Actual filing date

2000-01-06

(45)

Published

2001-06-10

(72)

Inventor

Berdnikov A.E.Chernomordik V.D.Popov A.A.Budagjan B.G.Sherchenkov A.A.

(73)

Holder

Institut Mikroehlektroniki Ran

METHOD FOR PRODUCING AMORPHOUS HYDROGENATED SILICON Russian patent published in 2001 - IPC

Abstract RU 2168795 C1

FIELD: solid-state electronics. SUBSTANCE: method includes disintegration of monosilone in glow discharge plasma to produce products of reaction and evaporation of their film in glow discharge plasma onto substrate. Novelty is that for disintegration and evaporation use is made of glow-discharge plasma at frequency of 45-65 kHz. EFFECT: enhanced rate of growth of evaporated film. 1 tbl

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RU 2 168 795 C1

Authors

Berdnikov A.E.

Chernomordik V.D.

Popov A.A.

Budagjan B.G.

Sherchenkov A.A.

Dates

2001-06-10—Published

2000-01-06—Filed

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