FIELD: physics.
SUBSTANCE: in the method for plasmochemical etching of microelectronics material, the material is placed on a substrate holder in a vacuum chamber, working gas is fed into the vacuum chamber, plasma is ignited via radio-frequency induction discharge and radio-frequency power is fed to the substrate holder. Etching is carried out with division into repeating cycles. Each cycle consists of two phases: etching and passivation, wherein during the etching phase, radio-frequency power is fed to the substrate holder in the range of 208-300 W for 0.1-100 s, and at the passivation phase - in the range of 100-120 W for 0.1-40 s.
EFFECT: such etching conditions enable to improve uniformity of etching 2,5-3,5-fold while maintaining the rate of etching.
2 dwg, 1 tbl
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