MATRIX OF FIELD-EMISSION CATHODES WITH GATES (ALTERNATIVES) AND THEIR MANUFACTURING PROCESS Russian patent published in 2007 - IPC H01J1/30 H01J9/02 H01J31/12 

FIELD: vacuum microelectronics; matrices of field-emission cathodes and devices built around them: field-emission displays, microelectronic vacuum current switches, and the like.

SUBSTANCE: proposed matrix of field-emission cathodes with gates has substrate, cathode layer of electricity conducting material on upper surface of mentioned substrate, resistive layer of high-resistivity material on upper surface of mentioned cathode layer, insulating layer disposed on upper layer of mentioned resistive layer that has plurality of through holes perpendicular to upper and lower surfaces of insulating layer, gate layer of electricity conducting material disposed on upper surface of mentioned insulating layer incorporating gate holes aligned with mentioned insulating-layer holes, and emission cathodes disposed in mentioned holes of insulating layer; mentioned emission cathodes are made of metal film in the form of sleeve whose outer surface is aligned with inner surface of mentioned hole in insulating layer so that upper edge of sleeve wall is level with upper surface of insulating layer and sleeve bottom contacts mentioned resistive layer; there is space in insulating layer between emission-cathode sleeve wall and gate hole whose depth equals or is smaller than insulating-layer thickness and width is larger than or equal to that of mentioned space.

EFFECT: enhanced uniformity and density of emission current throughout matrix surface area.

14 cl, 16 dwg, 2 ex