VACUUM INTEGRATED MICROELECTRONIC DEVICE AND METHOD OF PRODUCTION THEREOF Russian patent published in 2008 - IPC H01J1/30 

FIELD: physics.

SUBSTANCE: vacuum integrated microelectronic device contains substrate, anode layer, separating layer with apertures, insulation layer with cathode apertures, cathode layer, emission cathodes located in apertures of isolating layer. Emission cathodes are made in the form of geometrical cylinder which external surface is combined with internal surface of cathode aperture so that lower edge of cylinder wall is located at the same level as lower surface of insulation layer or as upper surface of separating layer, the upper edge of cylinder wall having electric contact to cathodic layer, thus there is a cavity in insulation layer within interval between cylinder wall of emitting cathode and aperture edge in separating layer.

EFFECT: increased production reproducibility of electric characteristics of devices and increased integration density.

20 cl, 22 dwg