FIELD: electronic engineering; dielectric windows for microwave energy output.
SUBSTANCE: proposed method for producing microwave energy output window built around CVD diamond dielectric wafer and characterized in enhanced thermomechanical strength includes treatment of dielectric wafer surface with alkali solution at temperature of 250 - 300 °C followed by its activation by heating at temperature of 750 - 800 °C for 1-1.5 h in atmosphere environment. Dielectric wafer is coated with carbide-forming metals of total thickness not over 1 μm evaporated in vacuum onto cold wafer for its next connection to metal waveguide through sealed joint, this being followed by electrolytic deposition of nickel layer, maximum 0.5 μm thick, thereon. Time between dielectric wafer surface activation and its coating for next connection to metal waveguide through sealed joint is not over 15 minutes.
EFFECT: enhanced reliability and yield due to improved reproducibility of method without enhancing dielectric loss.
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