METHOD FOR MANUFACTURING MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2015 - IPC H01L21/82 H05K1/00 

FIELD: electricity.

SUBSTANCE: in a method for manufacturing a microwave integrated circuit, including manufacturing of a dielectric substrate of diamond with the thickness of 100-200 mcm, application of a metallised coating, formation of active and passive elements, elements of transmission lines, outputs, grounding elements, a layer of crystalline semi-insulating silicon is prefabricated with the thickness of 350-500 mcm and its face is treated up to a roughness of at least of 14^th class and the dielectric diamond substrate is made at the face of the crystalline semi-insulating silicon layer, then the layer of crystalline semi-insulating silicon is thinned at the reverse side and active and passive elements, elements of transmission lines, outputs are formed at the reverse side of the crystalline semi-insulating silicon layer; in the dielectric diamond substrate and crystalline semi-insulating silicon layer from the side of the dielectric diamond substrate feedthrough holes are made with a grounding pattern and then the metallised coating is applied to the dielectric diamond substrate and walls of the above feedthrough holes.

EFFECT: improved electrical performance of the integrated circuit at improved reliability, reproducibility, reduced labour intensity of manufacturing and reduced weight and dimensions.

3 cl, 1 dwg, 1 tbl