FIELD: optical and nano-electronics, possible use as radiation source in optical electronics, optics and other industrial branches.
SUBSTANCE: injection light-emitting device has layers, forming p-n transitions, and consists of a series of hetero-epitaxial layers of dielectric and nano-crystalline silicon, grown on silicon substrate, each silicon layer consists of p-type and n-type areas with distinct division boundaries, and ohmic contacts are located on opposite edges of device.
EFFECT: creation of injection light-emitting device with lower costs, increased reliability and expanded field of application.
1 dwg
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