FIELD: physics.
SUBSTANCE: optoelectronic device contains an emitter and a photodetector positioned in one plane at a certain distance from each other, ohmic contacts, wherein the emitter and the photodetector are made of consistently grown heteroepitaxial layers of dielectric and nanocrystalline silicon in the silicon substrate, and each silicon layer consists of p- and n-type sections with the sharp section borders.
EFFECT: optoelectronic device according to the invention has a monolithic and small-sized structure, more reliable and less expensive.
3 dwg
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