HETEROSTRUCTURE OF GaPAsN LED AND PHOTODETECTOR ON Si SUBSTRATE AND METHOD OF ITS MANUFACTURE Russian patent published in 2018 - IPC H01L31/04 H01L31/18 H01L33/32 

FIELD: lighting equipment.

SUBSTANCE: invention relates to semiconductor heterostructures for light-emitting diodes and photoelectric converters manufacture based on solid solutions of GaPAsN on silicon substrates. Heterostructures of the GaPAsN LED and the photodetector on the Si substrate according to the invention include a seed layer of GaP, formed by successive deposition of gallium, Ga, and phosphorus, P, monolayers onto a silicon substrate; first contact layer doped with an n- or p-type impurity; active region with its own type of conductivity; a second contact layer consisting of a GaP layer doped with an impurity of the opposite type as compared to the first contact layer; while a vicinal undoped silicon substrate with orientation (100) is used as silicon substrate; the first contact layer consists of a short-period superlattice GaP/GaP_1-xN_x (0.015≦x≦0.020); and the active region with its own type of conductivity consists of a superlattice GaP_1-xN_x/GaP_1-x-yAs_yN_x (0.015≦x≦0.020, 0.12≦y≦0.17).

EFFECT: invention provides the possibility of creating on the basis of the GaPAsN heterostructure LED and a photodetector on a Si substrate of light-emitting diodes and photovoltaic converters with smaller instrument losses and increased radiative efficiency in comparison with analogues.

5 cl, 3 dwg