FIELD: electronics.
SUBSTANCE: invention relates to solid-state electronics. Invention comprises forming a surface layer of semiconductor on an insulator. In insulator at a distance from surface of semiconductor layer, with shorter diffusion length of charge carriers, arising from irradiation with external ionising radiation, formed by ion implantation of light gas and subsequent high-temperature annealing defective thermally stable layer with high recombination ability of said charge carriers and created in defective layer thermostable micropores. Substrate used can be an insulator, insulator can be sapphire, semiconductor can be silicon, and light gas can be helium.
EFFECT: invention provides higher radiation resistance, improved electrical properties of said structures and simple method for production thereof.
6 cl, 1 dwg
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