SEMICONDUCTOR-ON-INSULATOR STRUCTURE AND METHOD OF ITS MANUFACTURING Russian patent published in 2017 - IPC H01L21/762 

FIELD: electricity.

SUBSTANCE: semiconductor-on-insulator structure comprises an insulator, a semiconductor surface layer arranged thereon and a defective thermally stable layer formed in the insulator by implantation of light gas ions and subsequent high-temperature annealing with a high recombination capacity of charge carriers which occur under irradiation with external ionizing radiation. The defective layer contains thermally stable micropores and is located at a distance from the surface layer of the semiconductor less than the length of diffusion of charge carriers arising at said irradiation. The insulator may be used as a substrate, and sapphire can be used as an insulator. Silicon can is used as a semiconductor, and helium can be used as light gas. The semiconductor-on-insulator structure is designed as a heterostructure and the required elastic voltages are created in the surface layer of the semiconductor by different selected modes of implantation which are necessary for further manufacture of semiconductor devices.

EFFECT: creation of required elastic stresses in the semiconductor layer, improvement of the electrical properties of the semiconductor-on-insulator structures, and simplification of the method of their manufacturing.

7 cl, 1 dwg, 1 tbl