FIELD: optoelectronics.
SUBSTANCE: proposed sensing element of infrared radiation detector made in the form of thin solid-solution film uses Cd1-xSnxS as solid-solution material, where x = 0.1 - 0.66 and its film thickness ranges between 0.3 and 0.7 μm.
EFFECT: enlarged range of detected radiation, facilitated manufacture.
1 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| OPTICAL FILTER | 2007 |
|
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