METHOD FOR PRODUCING EPITAXIAL LAYERS OF CDXHG (1-X) TE FROM TELLURIUM-BASED SOLUTION Russian patent published in 2017 - IPC C30B19/04 C30B19/12 C30B29/48 C30B19/06 H01L21/02 H01L21/368 H01L31/296 H01L31/09 H01L31/18 

FIELD: chemistry.

SUBSTANCE: presented method for producing epitaxial layers of Cd_xHg_1-xTe from the tellurium-based solution involves the growth of an epitaxial layer of Cd_xHg_1-xTe (0.19<x<0.33) by the method of liquid-phase epitaxy in a sealed quartz ampoule at the temperature of 500÷513°C to the substrate of Cd_1-yZn_yTe (and 0.02<y<0.06) with the crystallographic surface orientation (111)B±0.5°, located horizontally above the layer of the liquid phase at the height of 1 to 2 mm, in conditions of forced cooling of the substrate/solution system to 6÷11°C depending on the desired thickness of the epitaxial layer, and the preliminary dissolution of the surface substrate layer in the superheated tellurium-based solution for not more than 2° relative to the liquidus temperature, from which the epitaxial layer is grown, wherein system cooling is carried out at the temperature reduction rate of 0.2÷0.5 deg/min, starting from the time of the substrate contact with superheated solution.

EFFECT: producing epitaxial layers without deflecting the shape of the surface from the shape of the substrate surface.

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