SEMICONDUCTOR INJECTION LASER Russian patent published in 2007 - IPC H01S5/32 

FIELD: quantum electronics; pumping solid-state lasers.

SUBSTANCE: proposed injection laser has separate-limit heterostructure incorporating quantum-size active region as well as top and bottom additional layers abutting against the latter, top and bottom waveguide layers, p and n emitters. Top and bottom waveguide layers abut against top and bottom additional layers. Emitters of p and n polarity of conductivity abut against waveguide layers. Emitters are made of solid Al_XGa_1-XAs solution. Waveguide layers are made of solid Al_YGa_1-YAs solution. Additional layers are made of solid Al_ZGa_1-ZAs solution. Value of X in solid solution for emitter ranges between 0.5 and 0.7 and value of Y in solid solution for waveguide layers is between 0.39 and 0.41; thickness of waveguide layers ranges between 1 500 and 1 800 nm. Value of Z in solid solution for additional layers at waveguide layer boundaries monotonously reduces to 0.34 ≤ Z ≤ 0.36 at active region boundaries.

EFFECT: avoided concentration of main transverse mode electromagnetic field in additional layer, reduced radiation power density at optical laser faces, enhanced service life and efficiency, reduced optical loss.

1 cl, 1 dwg, 1 tbl